THERMODYNAMIC EVALUATION OF CHEMICAL-COMP ONENT INTERACTION BETWEEN SEMICONDUCTOR SUBSTRATE AND THIN-FILM SILICA COATING DOPED BY RARE-EARTHS OR II-GROUP METAL-OXIDES

Authors
GAPONENKO NV BORISENKO VE BACHILO EY GROZHIK VA MOLCHAN IS
Citation
Nv. Gaponenko et al., THERMODYNAMIC EVALUATION OF CHEMICAL-COMP ONENT INTERACTION BETWEEN SEMICONDUCTOR SUBSTRATE AND THIN-FILM SILICA COATING DOPED BY RARE-EARTHS OR II-GROUP METAL-OXIDES, Doklady Akademii nauk BSSR, 41(1), 1997, pp. 64-68
Citations number
15
Categorie Soggetti
Multidisciplinary Sciences
Journal title
Doklady Akademii nauk BSSR → ACNP
ISSN journal
0002354X
Volume
41
Issue
1
Year of publication
1997
Pages
64 - 68
Database
ISI
SICI code
0002-354X(1997)41:1<64:TEOCOI>2.0.ZU;2-N
Abstract
The thermodynamic analysis of chemical interaction between semiconduct or substrate and thin film silica coating doped by II and III group me tal oxides shows that there is, in some cases, a possibility of metal reduction from its oxide. The results obtained are useful for solid-st ate electronics technology.