Characteristics of InGaN laser diodes in the pure blue region

InGaN multi-quantum-well-structure laser diodes (LDs), whose emission wavel engths are in the pure blue region, were grown on epitaxially laterally ove rgrown GaN on a free-standing GaN substrate by the metaorganic chemical-vap or deposition method. The wavelength dependence of the InGaN LD characteris tics was investigated. These results indicated that there is a strong relat ionship between the threshold current density and the emission wavelength o f LDs. LDs with an emission wavelength of 460 nm were demonstrated. The thr eshold current density and voltage of these LDs were 3.3 kA/cm(2) and 4.6 V , respectively. The estimated lifetime was approximately 3000 h under 50 de greesC continuous-wave operation at an output power of 5 mW. (C) 2001 Ameri can Institute of Physics.