Ultraviolet picosecond optical pulse generation from a mode-locked InGaN laser diode

Authors
Gee, S Bowers, JE
Citation
S. Gee et Je. Bowers, Ultraviolet picosecond optical pulse generation from a mode-locked InGaN laser diode, APPL PHYS L, 79(13), 2001, pp. 1951-1952
Citations number
8
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
APPLIED PHYSICS LETTERS
ISSN journal
00036951 → ACNP
Volume
79
Issue
13
Year of publication
2001
Pages
1951 - 1952
Database
ISI
SICI code
0003-6951(20010924)79:13<1951:UPOPGF>2.0.ZU;2-2
Abstract
Ultraviolet optical pulses were generated by actively mode locking an exter nal cavity InGaN laser at a wavelength of 409 nm with a temporal pulse dura tion of 30 ps. The average power was 2 mW and the time-bandwidth product wa s 1.2. Dynamic detuning plays a major role in pulse development. (C) 2001 A merican Institute of Physics.