Blue InGaN/GaN multiple-quantum-well optically pumped lasers with emissionwavelength in the spectral range of 450-470 nm

Optically pumped lasing in the wavelength range of 450-470 nm in InGaN/GaN multiple-quantum-well heterostructures grown by metalorganic vapor phase ep itaxy was achieved and investigated. The energy and power per pulse of the laser were 80 nJ and 10 W correspondingly for one facet at room temperature . The far-field patterns of the laser emission consisted of three light spo ts near the angles of +30 degrees, -15 degrees, and -45 degrees. The highes t operating temperature was 450 K. The photoluminescence and photoluminesce nce excitation spectrum structures suggest that the quantum dots inside the quantum wells are involved in the recombination mechanism. (C) 2001 Americ an Institute of Physics.