Citation
F. Bugge et al., 12 W continuous-wave diode lasers at 1120 nm with InGaAs quantum wells, APPL PHYS L, 79(13), 2001, pp. 1965-1967
Citations number
11
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
APPLIED PHYSICS LETTERS
ISSN journal
00036951
→ ACNP
Volume
79
Issue
13
Year of publication
2001
Pages
1965 - 1967
Database
ISI
SICI code
0003-6951(20010924)79:13<1965:1WCDLA>2.0.ZU;2-O
Abstract
Highly strained InGaAs quantum wells were grown by metalorganic vapor-phase
epitaxy. By lowering the growth temperature to 530 degreesC, a maximum pho
toluminescence wavelength of 1192 nm was achieved. High-power diode lasers
with a maximum lasing wavelength of 1175 nm were fabricated. A continuous-w
ave output power of 12 W at a heat-sink temperature of 25 degreesC was obta
ined at a lasing wavelength of 1120 nm. (C) 2001 American Institute of Phys
ics.