Origin of photoluminescence around 2.6-2.9 eV in silicon oxynitride

A broad photoluminescence (PL) around 2.6-2.9 eV is known to appear in hydr ogenated silicon oxynitride. Although its origin was reported to be Si-N bo nds, it is not so clear since the material contains hydrogen. In the presen t research, we have confirmed that the same PL appears in silicon oxynitrid e grown by nitriding of silicon dioxide. The depth profile of the PL intens ity agrees with that of the nitrogen concentration. Furthermore, the emissi on spectrum, excitation spectrum, and decay constant of this PL agree with those of the PL observed in silicon nitride. Based on these results and the oretical discussion, the origin of the 2.6-2.9 eV PL is estimated to be Si- N bonds. (C) 2001 American Institute of Physics.