Metalorganic vapor-phase epitaxial growth and photoluminescent properties of Zn1-xMgxO(0 <= x <= 0.49) thin films

High-quality Zn1-xMgxO(0.00 less than or equal tox less than or equal to0.4 9) thin films were epitaxially grown at 500-650 degreesC on Al2O3(00.1) sub strates using metalorganic vapor-phase epitaxy. By increasing the Mg conten t in the films up to 49 at. %, the c-axis constant of the films decreased f rom 5.21 to 5.14 Angstrom and no significant phase separation was observed as determined by x-ray diffraction measurements. Furthermore, the near-band -edge emission peak position showed blueshifts of 100, 440, and 685 meV at Mg content levels of 9, 29, and 49 at. %, respectively. Photoluminescent pr operties of the alloy films are also discussed. (C) 2001 American Institute of Physics.