High efficiency solid-state photovoltaic device due to inhibition of interface charge recombination

Citation
J. Kruger et al., High efficiency solid-state photovoltaic device due to inhibition of interface charge recombination, APPL PHYS L, 79(13), 2001, pp. 2085-2087
Citations number
12
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
APPLIED PHYSICS LETTERS
ISSN journal
00036951 → ACNP
Volume
79
Issue
13
Year of publication
2001
Pages
2085 - 2087
Database
ISI
SICI code
0003-6951(20010924)79:13<2085:HESPDD>2.0.ZU;2-9
Abstract
The performance of solid-state dye-sensitized solar cells based on spiro-Me OTAD was considerably improved by controlling charge recombination across t he interface of the heterojunction. This was achieved by blending the hole conductor matrix with a combination of 4-tert-butylpyridine (tBP) and Li[CF 3SO2](2)N. Open circuit voltages U-oc over 900 mV and short circuit current s I-sc up to 5.1 mA were obtained, yielding an overall efficiency of 2.56% at AM1.5 illumination. These values have been fully confirmed at the Nation al Renewable Energy Laboratories for a device with an active area of 1.07 c m(2), signifying a dramatic improvement compared to previously reported val ues for a similar device. (C) 2001 American Institute of Physics.