J. Kruger et al., High efficiency solid-state photovoltaic device due to inhibition of interface charge recombination, APPL PHYS L, 79(13), 2001, pp. 2085-2087
The performance of solid-state dye-sensitized solar cells based on spiro-Me
OTAD was considerably improved by controlling charge recombination across t
he interface of the heterojunction. This was achieved by blending the hole
conductor matrix with a combination of 4-tert-butylpyridine (tBP) and Li[CF
3SO2](2)N. Open circuit voltages U-oc over 900 mV and short circuit current
s I-sc up to 5.1 mA were obtained, yielding an overall efficiency of 2.56%
at AM1.5 illumination. These values have been fully confirmed at the Nation
al Renewable Energy Laboratories for a device with an active area of 1.07 c
m(2), signifying a dramatic improvement compared to previously reported val
ues for a similar device. (C) 2001 American Institute of Physics.