Electrically pumped lasing from CdSe quantum dots

Citation
M. Klude et al., Electrically pumped lasing from CdSe quantum dots, ELECTR LETT, 37(18), 2001, pp. 1119-1120
Citations number
8
Categorie Soggetti
Eletrical & Eletronics Engineeing
Journal title
ELECTRONICS LETTERS
ISSN journal
00135194 → ACNP
Volume
37
Issue
18
Year of publication
2001
Pages
1119 - 1120
Database
ISI
SICI code
0013-5194(20010830)37:18<1119:EPLFCQ>2.0.ZU;2-5
Abstract
Fabrication of a ZnSe-based laser diode Which employs a fivefold CdSe quant um dot stack separated by ZnSSe spacer layers of high S content is reported . For the first time, electrically pumped room-temperature lasing from such quantum dots was obtained at a wavelength around 560.5nm. The threshold Cu rrent density is 7.5 kA/cm(2).