Fabrication of a ZnSe-based laser diode Which employs a fivefold CdSe quant
um dot stack separated by ZnSSe spacer layers of high S content is reported
. For the first time, electrically pumped room-temperature lasing from such
quantum dots was obtained at a wavelength around 560.5nm. The threshold Cu
rrent density is 7.5 kA/cm(2).