RF and microwave phase shifter using complementary bias techniques

A novel method for the design of an RF phase shifter using a standard found ry process is described. This phase shift achieves very low and near-consta nt insertion loss. The proposed method uses 'complementary' control techniq ues to keep variable parasitic resistance in a standard transistor to minim um. Using an only single stage reflection configuration which employs N var actor diodes as a reflection terminator and M varactor diodes. a minimum in sertion loss variation can be obtained. The technique is verified by, measu rement when N = M = 1.