Demonstration of 140 A, 800 V4H-SiC pin/Schottky barrier diodes with multi-step junction termination extension structures

Authors
Alexandrov, P Zhao, JH Wright, W Pan, M Weiner, M
Citation
P. Alexandrov et al., Demonstration of 140 A, 800 V4H-SiC pin/Schottky barrier diodes with multi-step junction termination extension structures, ELECTR LETT, 37(18), 2001, pp. 1139-1140
Citations number
3
Categorie Soggetti
Eletrical & Eletronics Engineeing
Journal title
ELECTRONICS LETTERS
ISSN journal
00135194 → ACNP
Volume
37
Issue
18
Year of publication
2001
Pages
1139 - 1140
Database
ISI
SICI code
0013-5194(20010830)37:18<1139:DO1A8V>2.0.ZU;2-R
Abstract
DC test results of MPS diodes using multi-step junction termination extensi on (MJTE) designs are presented. The measurements include reverse leakage c urrent, breakdown, an forward voltage drop. The MITE design allows full uti lisation of the large breakdown properties of SiC. Packaged diodes, contain ing multiple MPS cells with MJTE designs, also are described.