0.3 dB minimum noise figure at 2.5 GHz of 0.13 mu m Si/Si0.58Ge0.42 n-MODFETs

RF and microwave noise performances of strained Si/Si0.58Ge0.42 n-MODFETs a re presented for the first time. The 0.13 mum gate devices have de-embedded f(T) = 49 GHz, f(max) = 70 GHz and a record intrinsic g(m) = 700 mS/mm. A de-embedded minimum noise figure NFmin = 0.3 dB with a 41 Omega noise resis tance R-n and a 19 dB associated gain G(ass) are obtained at 2.5 GHz, while NFmin = 2.0 dB With G(ass) = 10 dB at 18 GHz. The noise parameters measure d up to 18 GHz and from 10 to 180 mA/mm with high gain and low power dissip ation show the potential of SiGe MODFETs for mobile communications.