Transferred-substrate InP/InGaAs/InP double heterojunction bipolar transistors with f(max)=425 GHz

Authors
Lee, S Kim, HJ Urteaga, M Krishnan, S Wei, Y Dahlstrom, M Rodwell, M
Citation
S. Lee et al., Transferred-substrate InP/InGaAs/InP double heterojunction bipolar transistors with f(max)=425 GHz, ELECTR LETT, 37(17), 2001, pp. 1096-1098
Citations number
3
Categorie Soggetti
Eletrical & Eletronics Engineeing
Journal title
ELECTRONICS LETTERS
ISSN journal
00135194 → ACNP
Volume
37
Issue
17
Year of publication
2001
Pages
1096 - 1098
Database
ISI
SICI code
0013-5194(20010816)37:17<1096:TIDHBT>2.0.ZU;2-9
Abstract
InP/InGaAs/InP double heterojunction bipolar transistors (DHBTs) with f(max ) = 425 GHz and f(tau) = 141 GHz using transferred-substrate technology are reported. This is the highest reported f(max) for a DHBT. The breakdown vo ltage BCCEO is 8 V at J(C) = 5 x 10(4) A/cm(2) and the DC current gain beta is 43.