2D write addressability of tunneling junction MRAM elements

In magnetic tunneling junction MRAM devices, write addressing of each indiv idual memory element is accomplished by using an x-y grid of word lines, wh ich generate easy and hard axis fields. In this paper, we present a systema tic micromagnetic modeling study of switching behavior with both easy and h ard axis fields for memory elements with ends tapered into various angles a nd at different aspect ratios. The write margin and addressability will be discussed.