Citation
M. Bhattacharyya et al., Thermal variations in switching fields for sub-micron MRAM cells, IEEE MAGNET, 37(4), 2001, pp. 1970-1972
Citations number
9
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
IEEE TRANSACTIONS ON MAGNETICS
ISSN journal
00189464
→ ACNP
Volume
37
Issue
4
Year of publication
2001
Part
1
Pages
1970 - 1972
Database
ISI
SICI code
0018-9464(200107)37:4<1970:TVISFF>2.0.ZU;2-G
Abstract
Thermal effects in switching of sub-micron tunnel junctions are investigate
d. The switching field is shown to be inversely dependent on temperature, a
nd switching field jitter is shown to be strong function of temperature. Mi
cromagnetic modeling is used to understand thermal effects. In some instanc
es a stability factor (defined as KV/kT) of 100 or more may be required for
acceptable switching field jitter, while with proper optimization of FM la
yers, stability factors of 50 or 60 may suffice.