Magnetic strips aimed at high-frequency carrier-type magnetic field sensors
were studied by using various strip widths in a carrier frequency range of
gigahertz to obtain conditions for large impedance change. The impedance c
hange was attributed to a magnetic resonance effect. It was shown that dc m
agnetic field regions at which the maximum change of impedance occur for wi
de strip elements were closely related to the applied carrier frequencies a
s expected theoretically. The dc magnetic field for the maximum sensitivity
decreased as strips become narrow.