Incorporation of ferromagnetic metallic films in planar transmission linesfor microwave device applications

Citation
N. Cramer et al., Incorporation of ferromagnetic metallic films in planar transmission linesfor microwave device applications, IEEE MAGNET, 37(4), 2001, pp. 2392-2394
Citations number
10
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
IEEE TRANSACTIONS ON MAGNETICS
ISSN journal
00189464 → ACNP
Volume
37
Issue
4
Year of publication
2001
Part
1
Pages
2392 - 2394
Database
ISI
SICI code
0018-9464(200107)37:4<2392:IOFMFI>2.0.ZU;2-I
Abstract
We constructed a series of microstrip and co-planar microwave waveguides. T hese structures use metallic ferromagnets and therefore exhibit strongly fr equency-dependent attenuation and phase-shift effects. The lines have maxim um attenuation peaks occurring at the ferromagnetic resonance frequency, wh ich increases with applied magnetic field. Such properties are used in band -stop filters. The devices used monocrystalline Fe films grown by Molecular Beam Epitaxy and polycrystalline sputtered permalloy films. For our device s that incorporated Fe the band-stop frequencies ranged from 10-20 GHz for applied fields up to only 80 kA/m (1000 Oersted). For devices using permall oy, the band-stop frequency was in the 5-10 GHz range for applied fields le ss than 80 kA/m. The maximum power attenuation was about 100 dB/cm, much la rger than the previously reported values of 4 dB/cm. The resonance conditio n also affects the phase of the transmitted wave, strongly changing phase a bove and below the resonance frequency. The result is a phase-shifter that is tunable with applied magnetic field. We observed phase changes of over 3 60 degrees /cm with an applied field of less than 40 kA/m.