Thin films with barium hexaferrite (BaM) layers on thermally oxidized silic
on wafers were fabricated by water-based sol-gel method. Polycrystalline Ba
Fe12O19/SiO2/Si(100) thin films were characterized with Rutherford backscat
tering, x-ray diffraction, vibrating sample magnetometer, and atomic force
microscope as well as Fourier transform infrared spectroscopy (FT-IR). The
thin films were annealed at 600-900 degreesC in air for 2 hours. The patter
n for the sample annealed at a temperature above 650 degreesC indexed well
on the M-type hexagonal structure and no other phases were detectable. The
films were composed of uniformly distributed hexagonal-type grains, with di
ameters between 400 and 600.. Surface roughness of the films was between 20
and 40 Angstrom . The perpendicular coercivity H-C perpendicular to and in
-plane one H-C// were 4766 Oe and 4480 Oe, respectively, at room temperatur
e under an applied field of 10 kOe annealed at 650 degreesC for 2 hours.