Preparation and properties of thin silicon nitride films

Authors
Reddy, SV Reddy, PN
Citation
Sv. Reddy et Pn. Reddy, Preparation and properties of thin silicon nitride films, I J PA PHYS, 39(6), 2001, pp. 373-377
Citations number
24
Categorie Soggetti
Physics
Journal title
INDIAN JOURNAL OF PURE & APPLIED PHYSICS
ISSN journal
00195596 → ACNP
Volume
39
Issue
6
Year of publication
2001
Pages
373 - 377
Database
ISI
SICI code
0019-5596(200106)39:6<373:PAPOTS>2.0.ZU;2-F
Abstract
Very thin thermal silicon nitride films have been prepared using an indigen ously developed nitridation reactor. Growth kinetics of the films have been studied for different pressure conditions in the temperature range 850-110 0 degreesC for different time periods. Optical and electrical properties ha ve been studied. The values of refractive index, resistivity and dielectric constant of the films have been measured and are found to be 1.95, 8 x 10( 14) ohm-cm and 5.6, respectively.