Sodium induced secondary phase segregations in CuGaSe2 thin films

Citation
V. Nadenau et al., Sodium induced secondary phase segregations in CuGaSe2 thin films, J CRYST GR, 233(1-2), 2001, pp. 13-21
Citations number
25
Categorie Soggetti
Physical Chemistry/Chemical Physics
Journal title
JOURNAL OF CRYSTAL GROWTH
ISSN journal
00220248 → ACNP
Volume
233
Issue
1-2
Year of publication
2001
Pages
13 - 21
Database
ISI
SICI code
0022-0248(200111)233:1-2<13:SISPSI>2.0.ZU;2-J
Abstract
We report on sodium induced secondary phase segregations in CuGaSe2-thin fi lms, grown by multi-source evaporation on soda-lime glass. The films are ch aracterized by electron microscopy, micro-Raman, microphotoluminescence and secondary ion mass spectroscopy with high spatial resolution. The segregat ions show a crater-like structure of a typical diameter of 3-10 mum with an elevated rim and a reduced thickness of the film in the crater bottom. The Ga/(Ga + Cu) ratio in the craters is approximately 0.75 and the sodium con centration is increased by a factor of seven compared to that in the matrix . Micro-Raman spectroscopy within the craters suggests a nonchalcopyrite ph ase with a structure very similar to that of CuGa3Se5. As a possible explan ation we propose the formation of a quaternary Na-Cu-Ga-Se compound which i s based on the defect-chalcopyrite structure but having the Cu-vacancies pa rtially filled by Na atoms. (C) 2001 Elsevier Science B.V. All rights reser ved.