Comprehensive analysis of microtwins in the 3C-SiC films on Si(001) substrates

Microtwins in the 3C-SiC films grown on Si(0 0 1) by atmosphere pressure ch emical vapor deposition (APCVD) were investigated in detail using X-ray fou r-circle diffractometry. The Phi scan shows that 3C-SiC films can grow on S i substrates epitaxially and epitaxial relationship is revealed as (0 0 1)( 3C) (SiC)parallel to (0 0 1)(Si),[1 1 1](3C-SiC)parallel to [1 1 1](Si). Ot her diffraction peaks at about 15.8 degrees in x emerged in the pole figure s of the (I 1 1) 3C-SiC. We performed the pole figure of (1 0 (1) over bar 0)h-SiC and the reciprocal space mapping from the (1 1 1) reciprocal lattic e point of base SiC to the (0 0 2) point of microtwin for the first time, i ndicating that the diffraction peaks at 15.8 degrees in x result from not h exagonal SiC but microtwins of 3C-SiC, and twin inclusions are estimated to be around 1%. (C) 2001 Published by Elsevier Science B.V.