MOVPE based Zn diffusion into InP and InAsP/InP hetero structures

Zinc incorporation by post-growth metal-organic vapor phase epitaxy (MOVPE) based diffusion, also called metalorganic vapor phase diffusion (MOVPD), u sing diethylzinc (DEZ) as precursor into InP and InAs0.60P0.40 epitaxial la yers has been studied systematically. Both the InP and InAS(0.60)P(0.40) ep itaxial layers are grown with low pressure MOVPE. High hole concentrations of respectively 1.7 x 10(19) and 6 x 10(18)/cm(3) are obtained for InAs0.60 P0.40 and InP. Diffusion depths were measured using cleave-and-stain techni ques, electrochemical profiling, resistivity measurements and secondary ion mass spectroscopy. Hall measurements were also used to determine the hole concentrations. The diffusion depth can be controlled reproducibly within t he investigated range from 0.5 to over 2.0 mum. The diffusion coefficients for InP and InAs0.60P0.40 were derived and the influence of the dislocation density of the InP and InAs0.60P0.40 layers on the Zn diffusion process wa s investigated, through epitaxial growth on different substrate orientation s. (C) 2001 Elsevier Science B.V. All rights reserved.