Surface reaction and selective growth investigation of temperature modulation Si molecular-layer epitaxy

Si thin epitaxial layers were grown by a temperature modulation Si molecula r-layer epitaxy (TM Si MLE) method using Si2H6 gas. The in situ observation of the surface hydrogen desorption reaction during TM Si MLE was systemati cally investigated under different growth conditions. From experimental res ults, it was concluded that almost all of the surface hydrogen caused by Si 2H6 dissociative adsorption can be released in the case when the modulated temperature is 550 degreesC and retention duration is 0 s. The surface of t hin film grown by TM Si MLE was observed by the use of high-resolution fiel d-emission scanning electron microscope (FE-SEM) and perfect selective grow th was observed. (C) 2001 Elsevier Science B.V. All rights reserved.