Photoluminescence of AlGaAs/InGaAs/GaAs pseudomorphic HEMTs with differentthickness of spacer layer

Authors
Cao, X Zeng, YP Kong, MY Pan, LA Wang, BQ Zhu, ZP Wang, XG Chang, Y Chu, JH
Citation
X. Cao et al., Photoluminescence of AlGaAs/InGaAs/GaAs pseudomorphic HEMTs with differentthickness of spacer layer, J CRYST GR, 231(4), 2001, pp. 520-524
Citations number
12
Categorie Soggetti
Physical Chemistry/Chemical Physics
Journal title
JOURNAL OF CRYSTAL GROWTH
ISSN journal
00220248 → ACNP
Volume
231
Issue
4
Year of publication
2001
Pages
520 - 524
Database
ISI
SICI code
0022-0248(200111)231:4<520:POAPHW>2.0.ZU;2-P
Abstract
The photoluminescence spectra of the single delta -doped AlGaAs/InGaAs/GaAs pseudomorphic HEMTs with different thickness of spacer layer were studied. There are two peaks in the PL spectra of the structure corresponding to tw o sub-energy levels of the InGaAs quantum well. It was found that the photo luminescence intensity ratio of the two peaks changes with the spacer thick ness of the pseudomorphic HEMTs. The reasons were discussed. The possible u se of this phenomenon in optimization of pseudomorphic HEMTs was also propo sed. (C) 2001 Elsevier Science B.V. All rights reserved.