Citation
Vh. Etgens et al., Growth morphology and magnetism of MnAs/GaAs(001) epilayers, J MAGN MAGN, 226, 2001, pp. 1577-1579
Citations number
10
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
JOURNAL OF MAGNETISM AND MAGNETIC MATERIALS
ISSN journal
03048853
→ ACNP
Volume
226
Year of publication
2001
Part
2
Pages
1577 - 1579
Database
ISI
SICI code
0304-8853(200105)226:<1577:GMAMOM>2.0.ZU;2-Z
Abstract
MnAs grows epitaxially on GaAs(001) through formation of top-flat islands,
with sharp sloping sidewalls aligned with the GaAs [1 (1) over bar0] and [1
10] directions. Magnetization measurements indicate that the easy axis of t
he MnAs thin films is in-plane, along the [(1) over bar(1) over bar 20] dir
ection. The easy axis is aligned with [110] of GaAs, whatever the first mon
olayer of Mn was deposited on d(4x4) or (2x1)-Se reconstructed surfaces. (C
) 2001 Elsevier Science BY. All rights reserved.