Microscopic magnetic relaxation processes in epitaxial Fe/GaAs(001) mesostructures

Citation
Wy. Lee et al., Microscopic magnetic relaxation processes in epitaxial Fe/GaAs(001) mesostructures, J MAGN MAGN, 226, 2001, pp. 1594-1596
Citations number
9
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
JOURNAL OF MAGNETISM AND MAGNETIC MATERIALS
ISSN journal
03048853 → ACNP
Volume
226
Year of publication
2001
Part
2
Pages
1594 - 1596
Database
ISI
SICI code
0304-8853(200105)226:<1594:MMRPIE>2.0.ZU;2-U
Abstract
The magnetic relaxation and domain processes in epitaxial Fe/GaAs(0 0 1). t hin films and square dots have been investigated using time-resolved scanni ng Kerr microscopy. For 55 and 250 Angstrom Fe/GaAs(0 0 1) continuous films , it is clearly seen that relaxation proceeds by both discontinuous and sin gle 'jumps'. Magnetic relaxation studies reveal that large and abrupt wall displacements occur for the magnetisation reversal in 300 Angstrom epitaxia l Fe/GaAs(0 0 1) square dots, regardless of dot size (w = 5-45 mum). Domain observations demonstrate that domain wall motion dominates the magnetisati on reversal in the dot structures in spite of the presence of the dot edges . (C) 2001 Published by Elsevier Science B.V.