Resistance, magnetoresistance and Hall effect were studied in sputtered cob
alt films of varying thickness, deposited on silicon substrates, in the tem
perature range of 5-350 K and magnetic field up to 7 T. Contributions from
both metallic cobalt and silicide layers are revealed. The latter undergo a
metal-insulator transition in the temperature range of 260-280 K. (C) 2001
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