Transport and magnetotransport properties of Co thin films on Si

Citation
Ab. Pakhomov et al., Transport and magnetotransport properties of Co thin films on Si, J MAGN MAGN, 226, 2001, pp. 1631-1632
Citations number
9
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
JOURNAL OF MAGNETISM AND MAGNETIC MATERIALS
ISSN journal
03048853 → ACNP
Volume
226
Year of publication
2001
Part
2
Pages
1631 - 1632
Database
ISI
SICI code
0304-8853(200105)226:<1631:TAMPOC>2.0.ZU;2-A
Abstract
Resistance, magnetoresistance and Hall effect were studied in sputtered cob alt films of varying thickness, deposited on silicon substrates, in the tem perature range of 5-350 K and magnetic field up to 7 T. Contributions from both metallic cobalt and silicide layers are revealed. The latter undergo a metal-insulator transition in the temperature range of 260-280 K. (C) 2001 Elsevier Science B.V. All rights reserved.