Arrays of Si dots 400 nm squares with a spacing of 100 nm and a height of 2
00 nm were patterned on silicon substrates by electron beam lithography and
reactive ion etching, and a Co/Pt multilayer was sputter-deposited on thes
e patterned silicon substrates. The magnetic film covers the top of the dot
s, the bottom of the grooves and to a much less extent the side-walls of th
e dots. The magnetic properties were studied by magnetic force microscopy (
MFM). The Co/Pt multilayer exhibits perpendicular magnetic anisotropy and s
ingle-domain magnetic dots are obtained. Our results indicate that the widt
h of the switching field distribution of the dots is not due to magnetostat
ic interactions but can be ascribed to a distribution of defects in the dot
s. A statistical analysis of MFM images shows that no significant direct co
upling is mediated by the magnetic deposit on the side-walls of the dots. (
C) 2001 Published by Elsevier Science B.V.