Novel aspects of the growth of nitrides by MOVPE

Authors
Amano, H Akasaki, I
Citation
H. Amano et I. Akasaki, Novel aspects of the growth of nitrides by MOVPE, J PHYS-COND, 13(32), 2001, pp. 6935-6944
Citations number
31
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
JOURNAL OF PHYSICS-CONDENSED MATTER
ISSN journal
09538984 → ACNP
Volume
13
Issue
32
Year of publication
2001
Pages
6935 - 6944
Database
ISI
SICI code
0953-8984(20010813)13:32<6935:NAOTGO>2.0.ZU;2-L
Abstract
Recent topics in the growth of group III nitrides by MOVPE are reviewed. Th e process of low-temperature deposition of the buffer layer and the effect of the low-temperature-deposited interlayer on the growth of AlGaN are disc ussed. The growth of AlGaN on grooved GaN and on substrates is reviewed. Fi nally, recent topics on the growth of In-containing alloys in terms of the future aspects of new devices are presented.