Group-III nitride quantum heterostructures grown by molecular beam epitaxy

In the present paper, we address a review of group-III nitride quantum well s and quantum dots realized by molecular beam epitaxy (MBE) using ammonia a s a nitrogen source. Some important features of the growth of nitrides by M BE using ammonia are pointed out. We also emphasize the role of in situ ana lysis tools such as reflection high-energy electron diffraction. The optica l properties of several kinds of quantum heterostructure are presented. The y illustrate well the combined effects of polarization fields and carrier l ocalization. Finally, the use of InGaN/GaN QWs in LEDs for white light emis sion is presented.