Catalytic amplification of the soft lithographic patterning of Si. Nonelectrochemical orthogonal fabrication of photoluminescent porous Si pixel arrays
Y. Harada et al., Catalytic amplification of the soft lithographic patterning of Si. Nonelectrochemical orthogonal fabrication of photoluminescent porous Si pixel arrays, J AM CHEM S, 123(36), 2001, pp. 8709-8717
Photoluminescent, porous silicon pixel arrays were fabricated via a Pt-prom
oted wet etching of p-type Si(100) using a 1:1:1 EtOH/HF/H2O2 Solution. The
pixels were fabricated with micrometer-scale design rules on a silicon sub
strate that had been modified with an octadecyltrichlorosilane (OTS) monola
yer patterned using microcontact printing. The printed OTS layer serves as
an orthogonal resist template for the deposition of a Pt(O) complex, which
preferentially deposits metal species in areas not covered with OTS. The Pt
centers generate a localized oxidative dissolution process that pits the S
i in the Pt-coated regions, resulting in the formation of a porous silicon
microstructure that luminesces around 580 nm upon illumination with a UV so
urce. Scanning electron microscopy and fluorescence microscopy images of th
e fabricated porous silicon structures showed that features in the size ran
ge of similar to 10-150 mum, and possibly smaller, can be generated by this
catalytically amplified soft lithographic patterning method. Importantly,
the OTS acts as an etch mask, so that, even with significant hole transport
, etching is confined to areas coated with the Pt(O) complex.