Catalytic amplification of the soft lithographic patterning of Si. Nonelectrochemical orthogonal fabrication of photoluminescent porous Si pixel arrays

Citation
Y. Harada et al., Catalytic amplification of the soft lithographic patterning of Si. Nonelectrochemical orthogonal fabrication of photoluminescent porous Si pixel arrays, J AM CHEM S, 123(36), 2001, pp. 8709-8717
Citations number
46
Categorie Soggetti
Chemistry & Analysis",Chemistry
Journal title
JOURNAL OF THE AMERICAN CHEMICAL SOCIETY
ISSN journal
00027863 → ACNP
Volume
123
Issue
36
Year of publication
2001
Pages
8709 - 8717
Database
ISI
SICI code
0002-7863(20010912)123:36<8709:CAOTSL>2.0.ZU;2-E
Abstract
Photoluminescent, porous silicon pixel arrays were fabricated via a Pt-prom oted wet etching of p-type Si(100) using a 1:1:1 EtOH/HF/H2O2 Solution. The pixels were fabricated with micrometer-scale design rules on a silicon sub strate that had been modified with an octadecyltrichlorosilane (OTS) monola yer patterned using microcontact printing. The printed OTS layer serves as an orthogonal resist template for the deposition of a Pt(O) complex, which preferentially deposits metal species in areas not covered with OTS. The Pt centers generate a localized oxidative dissolution process that pits the S i in the Pt-coated regions, resulting in the formation of a porous silicon microstructure that luminesces around 580 nm upon illumination with a UV so urce. Scanning electron microscopy and fluorescence microscopy images of th e fabricated porous silicon structures showed that features in the size ran ge of similar to 10-150 mum, and possibly smaller, can be generated by this catalytically amplified soft lithographic patterning method. Importantly, the OTS acts as an etch mask, so that, even with significant hole transport , etching is confined to areas coated with the Pt(O) complex.