X-ray film interferometer as an instrument for semiconductor heterostructure investigation

Translation Moire pictures were first observed in interference topographs o btained using Synchrotron radiation. A film interferometer was prepared on the base of the GeSi heterosystem. Another film interferometer, which prese nts the heterosystem of epitaxial Si/ porous Si/ substrate Si, permitted us to observe a decrease in the bending or the film atomic planes at annealin g of the heterosystem. This bend smoothing was calculated with the sensitiv ity better than I A with the use of X-ray interference topographs. Contrast Peculiarities in Moire pictures are discussed for nondiffracting layers an d crystal quantum wells. (C) 2001 Elsevier Science B.V. All rights reserved .