The heavy ion micro-projection setup at Bochum

A new type of microbeam setup is presented allowing MeV ion projection imag ing of large area structures using the final lens of a high energy micropro be. Key issue of the new technology is the use of high aspect ratio high re solution stencil masks capable of withstanding high beam power which are no w available. While the theoretical lateral resolution limit for this setup should allow the production of features well below 40 nm in size, the pract ical imaging resolution demonstrated so far is at 300 nm with heavy ions an d typical implantation fluence. Microstructure formation is possible on sub strates which do not allow the application of surface contact masks or in s ituations where such masks would result in sample contamination due to sput tering. A compact sample heater provides high substrate temperatures up to 1300 degreesC during implantation for minimum damage implantation of crysta lline samples. This setup opens a fascinating new field of applications in materials science since many structures can be exposed simultaneously. Fast structured implantation of stoichiometric doses of e.g. rare earth element ions gives access to the production of new materials of high purity at dif ferent substrate temperatures within reasonable time. (C) 2001 Elsevier Sci ence B.V. All rights reserved.