Si-doped luminescence gratings

We report on the fabrication of ordered arrays of dots formed by Si implant ation through a grid into SiO2 Using the Bochum high-energy ion projector. Arrays of Si-implanted dots with dimensions in the micrometer and submicrom eter range have been made. The samples show a strong red photoluminescence at room temperature. By the combination of g-photoluminescence measurements and atomic force microscopy investigations optical and structural characte rization of the produced structures was possible. Additional investigations by high-resolution transmission electron microscopy, X-ray diffraction and temperature-dependent photo luminescence on conventionally implanted sampl es have been performed for comparison. (C) 2001 Elsevier Science B.V. All r ights reserved.