Electronic and structural properties of the n-GaAs: Si as-grown, alpha-particle irradiated and annealed

Authors
Kunert, HW
Citation
Hw. Kunert, Electronic and structural properties of the n-GaAs: Si as-grown, alpha-particle irradiated and annealed, NUCL INST B, 181, 2001, pp. 293-297
Citations number
6
Categorie Soggetti
Spectroscopy /Instrumentation/Analytical Sciences","Instrumentation & Measurement
Journal title
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS
ISSN journal
0168583X → ACNP
Volume
181
Year of publication
2001
Pages
293 - 297
Database
ISI
SICI code
0168-583X(200107)181:<293:EASPOT>2.0.ZU;2-5
Abstract
The effect of the alpha -particle irradiation and annealing on the electron ic properties and the LO and transverse optical (TO) phonons of the n-type GaAs, Si doped (10(19) cm(-3)) was investigated by means of low-temperature photoluminescence (LTPL) and backscattering Raman spectroscopy. Irradiatio n shifts the Si-impurity photoluminescence (PL) band from 1.5176 up to 1.53 eV and annealing shifts the 1.53 eV band to 1.49 eV. The alpha -particle i rradiation enhances the LO mode. The irradiated LO phonon strength is also calculated. (C) 2001 Elsevier Science B.V. All rights reserved.