Diffusion-time-resolved ion-beam-induced charge collection from stripe-like test junctions induced by heavy-ion microbeams

To design more radiation-tolerant integrated circuits (ICs), it is necessar y to design and test accurate models of ionizing-radiation-induced charge c ollection dynamics. A new technique, diffusion-time-resolved ion-beam-induc ed charge collection (DTRIBICC), is used to measure the average arrival tim e of the diffused charge, which is related to the average time of the arriv al carrier density at the junction. Specially designed stripe-like test jun ctions are studied using a 12 MeV carbon microbeam with a spot size of simi lar to1 mum. The relative arrival time of ion-generated charge and the coll ected charge are measured using a multiple parameter data acquisition syste m. A 2-D device simulation code, MEDICI, is used to calculate the charge co llection dynamics on the stripe-like test junctions. The simulations compar e well with experimental microbeam measurements. The results show the impor tance of the diffused charge collection by junctions, which is especially s ignificant for single-event upsets (SEUs) and multiple-event upsets (MEUs) in electronic devices. The charge sharing results also indicate that stripe -like junctions may be used as position-sensitive detectors with a resoluti on of similar to0.1 mum. (C) 2001 Elsevier Science B.V. All rights reserved .