Suppression of floating body effects in SOI-MOSFET studied using nuclear microprobes

Suppression of the floating body effects in partially depleted SOI-MOSFETs (silicon-on-insulator metal oxide semiconductor field effect transistors) w ith and without body contact electrodes has been investigated using nuclear microprobes with currents of 5-250 pA. Transient SOI-MOSFET behavior with and without body contact electrodes during ion irradiation by three-dimensi onal computer simulation has also been compared with that using nuclear mic roprobes. The floating body effects were observed in SOI-MOSFETs without bo dy contact electrodes by nuclear microprobe irradiation, while those were s uppressed in the SOI-MOSFETs with body contacts. (C) 2001 Elsevier Science B.V. All rights reserved.