Microprobe RBS analysis of localized processed areas by FIB etching and deposition

Localized beam-processed areas using chemical reactions induced by a 30 keV Ga+ focused ion beam (FIB) with and without I-2 (etching) and (CH3)(3)CH3C 5H5Pt gases (Pt deposition) have been analyzed using a 300 keV Be2+ micropr obe with a beam spot size of 50-80 nm. The analyzed results have been compa red with energy dispersive X-ray (EDX) analysis using an electron beam. The EDX analysis only indicated incorporated impurities at high fluence such a s Ga, Pt and C, while microprobe RBS analysis could detect residual iodine with low concentration which couldn't be detected by EDS analysis because o f the lower sensitivity of the EDX analysis for heavy atoms. (C) 2001 Elsev ier Science B.V. All rights reserved.