An ultrafast all-optical asymmetric Fabry-Perot switch based on bulk Be-doped InGaAsP grown by He-plasma-assisted epitaxy

We demonstrated ultrafast all-optical switching, using an asymmetric Fabry- Perot device, based on bulk Be-doped InGaAsP grown by He-plasma-assisted mo lecular beam epitaxy. We achieved 5 ps switching window (1/e fall time) and a peak contrast ratio of 20 dB at 1.57 mum. High contrast (> 10 dB) was ma intained over similar to 24 nm of bandwidth under switching energy density of 0.5 pJ/mum(2), and over similar to 40 nm of bandwidth when switching ene rgy density was increased to 1.4 pJ/mum(2). The switching operation was ind ependent of data pulse polarization, and could be potentially performed at high repetition rates.