Electro-optic intensity modulators at lambda=1.55 mu m utilizing strain-optic effects in LiNbO3

Electro-optic intensity modulators at lambda =1.55 mum are produced in LiNb O3 substrates using strain-induced channel waveguides formed by magnetron d eposition of a surface metal film and lift-off technology. The static strai n resulting from thermal expansion mismatch between the substrate and the m etal film that is caused by the plasma temperature during deposition induce s a localized increase in the refractive index via the strain-optic effect. Modulation depth of 100% at a pi -rad voltage of 16.1 V is demonstrated. E lectro-optic modulation behaviors in channel waveguides fabricated using st rain inducing surface metal film are compared to ones formed by thick SiO2 surface film. (C) 2001 society of Photo-Optical Instrumentation Engineers.