Investigation of processes in low-pressure expanding thermal plasmas used for carbon nitride deposition: 1. Ar/N-2/C2H2 plasma

Authors
Dinescu, G de Graaf, A Aldea, E van de Sanden, MCM
Citation
G. Dinescu et al., Investigation of processes in low-pressure expanding thermal plasmas used for carbon nitride deposition: 1. Ar/N-2/C2H2 plasma, PLASMA SOUR, 10(3), 2001, pp. 513-523
Citations number
48
Categorie Soggetti
Physics
Journal title
PLASMA SOURCES SCIENCE & TECHNOLOGY
ISSN journal
09630252 → ACNP
Volume
10
Issue
3
Year of publication
2001
Pages
513 - 523
Database
ISI
SICI code
0963-0252(200108)10:3<513:IOPILE>2.0.ZU;2-M
Abstract
The chemistry of argon, argon/nitrogen and argon/nitrogen/acetylene expandi ng thermal plasmas is investigated in order to unravel the role of plasma s pecies in the fast deposition (up to 40 nm s(-1)) of hydrogenated amorphous carbon nitride (a-C:H:N) films. The precursor dissociation is determined a nd the emission from the different plasmas is compared in order to distingu ish possible mechanisms for species production and excitation.