Self-trapped holes and recombination luminescence in LiBaF3 crystals

Citation
I. Tale et al., Self-trapped holes and recombination luminescence in LiBaF3 crystals, RADIAT MEAS, 33(5), 2001, pp. 751-754
Citations number
15
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
RADIATION MEASUREMENTS
ISSN journal
13504487 → ACNP
Volume
33
Issue
5
Year of publication
2001
Pages
751 - 754
Database
ISI
SICI code
1350-4487(200110)33:5<751:SHARLI>2.0.ZU;2-8
Abstract
We investigated electron paramagnetic resonance (EPR) angular dependencies, recombination afterglow and thermostimulated luminescence of undoped LiBaF 3 crystals, X-irradiated at low temperatures. EPR parameters of the F-2(-) molecule oriented along the [110] direction have been obtained. Based on th e value of the g-shift Deltag = g(perpendicular to) - g(II) = 0.02, charact eristic for the V-K-centres in similar perovskites, we propose that we inde ed observed the V-K-centres, not the H-centres. X-irradiation below 170 K r esults in creation of a long-time temperature-independent afterglow due to the tunnelling recombination between close electron and hole centres, The F -type electron centres and the V-K as well as probably O2- centres are prop osed to be the tunnelling recombination partners, responsible for the 4.1 a nd 3.15 eV luminescence bands, respectively. (C) 2001 Elsevier Science Ltd, All rights reserved.