The changes in the atomic structure as a function of annealing tempera
ture have been studied by Raman scattering in two different series of
hydrogenated amorphous carbon (a-C:H) deposited in a D.C. multipolar p
lasma system from methane gas. Series I and II samples were obtained a
t substrate biases respectively equal to -40 V and -600 V. In the as-d
eposited state, the two series have completely different microstructur
es (sp(2):sp(3) ratio). Indeed, the Raman spectra obtained for samples
of series II show two peaks; a broad one situated around 1360 cm(-1),
and a more intense peak centred at about 1580 cm(-1). On the contrary
, the Raman spectra of the as-deposited samples of series I are concea
led by the photoluminescence band. For low annealing temperatures (T <
500 degrees C), the two series behave differently and still exhibit c
ompletely different structure. For high temperatures (T > 500 degrees
C), the samples of the two series converge to a similar structure, clo
se to that of polycristalline graphite.