Deuterium diffusion in Mg-doped GaN layers grown by metalorganic vapour phase epitaxy

Metalorganic-vapour-phase-epitaxy-grown GaN layers have been exposed to a d euterium radio-frequency plasma. It is shown that in a certain plasma confi guration, deuterium diffuses significantly inside the samples as long as th ey are Mg doped. But, on the other hand, in non-intentionally doped samples , in equivalent plasma conditions, deuterium accumulates just beneath the s urface. It is also shown that in GaN:Mg, the diffusing deuterium species in teract with native hydrogen and are responsible for its redistribution insi de the layer.