Photovoltaic effects in an inhomogeneous semiconductor with position-dependent temperature

Citation
T. Piotrowski et S. Sikorski, Photovoltaic effects in an inhomogeneous semiconductor with position-dependent temperature, SEMIC SCI T, 16(9), 2001, pp. 750-758
Citations number
10
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
SEMICONDUCTOR SCIENCE AND TECHNOLOGY
ISSN journal
02681242 → ACNP
Volume
16
Issue
9
Year of publication
2001
Pages
750 - 758
Database
ISI
SICI code
0268-1242(200109)16:9<750:PEIAIS>2.0.ZU;2-H
Abstract
The theory and quantitative analysis of photovoltaic effects in an inhomoge neous semiconductor with a position-dependent energy gap in the presence of a temperature gradient are presented. Transport equations based on the the rmodynamics of irreversible processes are used to develop the theory. The t ransformation of the initial equations and suitable assumption led to a for mula revealing and arranging all photovoltaic effects occurring in a semico nductor. Four effects: the bulk photovoltaic Tauc effect; the mobility posi tion-dependence photovoltaic effect; the thermophotovoltaic effect; and the classical Seebeck thermoelectric effect are revealed. Quantitative relatio ns between particular effects and factors determining their significance ar e shown by means of numerical analysis and suitable diagrams.