Numerical analysis of the energy-band diagram of type-II p-GaInAsSb/p-InAsheterojunction and size-quantization levels at the interface

The equilibrium energy-band diagram of a broken-gap p-GaInAsSb/p-InAs heter ojunction was calculated by solving the Poisson equation with account of th e charge of free carriers and ionized impurities and the built-in charge at the heterointerface. The quantum level energies were found within the quas i-classical approximation for electrons in the self-consistent potential we ll. The calculated energies are close to those observed in electroluminesce nce spectra of such heterojunctions.