In this paper, the photovoltaic feature of metal-boron carbide-silicon (MCS
) solar cell was reported. The boron-doped diamond-like carbon thin film on
n-silicon substrate has been prepared using arc-discharge plasma chemical
vapor deposition (PCVD) technique. The conductivity and the resistivity of
the film were measured by Bio-Rad Hall5500PC system to be p-type semiconduc
tor and 3-12 Omega cm/square, respectively. The boron content in the films
was about 0.8-1.2%, obtained from Auger electron spectroscopy (AES), and so
me microcrystalline diamond grains (0.5-1.0 mum) embedded in the mainly amo
rphous network were revealed through scanning electron microscope (SEM) and
Raman spectrum. The performance of Au/C(B)/n-Si heterojunction solar cells
has been given under dark I-V rectifying curve and I-V working curve (with
100mW cm(-2) illumination). A measurement of open-circuit voltage V-oc = 5
80mV and short-circuit current density J(sc) = 32.5mA cm(-2) was obtained.
Accordingly, the energy conversion efficiency of the device was tentatively
determined to be about 7.9% in AM 1.5, 100mW/cm(2) illuminated. (C) 2001 E
lsevier Science B.V. All rights reserved.