Transport and optical property measurements in indium intercalated molybdenum diselenide single crystals grown by DVT technique

This paper describes the transport and optical property measurements in ind ium intercalated MoSe2 single crystals. The crystals have been grown by a d irect vapour transport (DVT) technique. Various transport properties, e.g. room temperature resistivity, high temperature resistivity (perpendicular t o c-axis from room temperature to 423 K and parallel to c-axis from room te mperature to 773 K), anisotropy ratio, low temperature resistivity (77 K to room temperature), Hall effect measurements, thermo-power measurements hav e been carried out and the results have been systematically presented. This study has clearly shown that indium intercalated molybdenum diselenide lik e the host crystal MoSe2 are n-type semiconductors. Optical absorption stud ies of the grown crystals have been used to evaluate the energies of the di rect band gaps in them. The variation of direct energy gap with amount of i ndium in InxMoSe2 has been adequately explained. (C) 2001 Elsevier Science B.V. All rights reserved.