The PI Langmuir-Blodgett (LB) films were prepared by imidizing the PAAS LB
films of PMDA and benzidine system with a thermal treatment at 250 degreesC
for 30 min, where the PAAS LB films were formed on substrates by using LB
technique. The imidization of PAAS LB films with various thickness were ide
ntified with UV-VIS and Fr-IR absorption spectroscopies. The PAAS and PI LB
films have been characterized by electric capacitance measurement. The thi
cknesses of one layer of PAAS and PI LB film that deposited at the surface
pressure of 27 mN/m were 20.9 and 4 Angstrom, respectively. lt was found th
at the PAAS and PI LB films formed well with molecular order was fabricated
. SEM has been used to investigated the surface morphology of PAAS and PI L
B films. (C) 2001 Elsevier Science B.V. All rights reserved.