X-ray irradiation at subthreshold energies modifies the surface micromorphology of epitaxial silicon layers on sapphire

Authors
Kiselev, AN Perevoshchikov, VA Skupov, VD Filatov, DO
Citation
An. Kiselev et al., X-ray irradiation at subthreshold energies modifies the surface micromorphology of epitaxial silicon layers on sapphire, TECH PHYS L, 27(9), 2001, pp. 725-727
Citations number
6
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
TECHNICAL PHYSICS LETTERS
ISSN journal
10637850 → ACNP
Volume
27
Issue
9
Year of publication
2001
Pages
725 - 727
Database
ISI
SICI code
1063-7850(2001)27:9<725:XIASEM>2.0.ZU;2-W
Abstract
Atomic force microscopy investigations revealed a change in the surface mic rorelief of the heteroepitaxial silicon films on sapphire substrates after pulsed X-ray irradiation at an energy of E less than or equal to 140 keV. ( C) 2001 MAIK "Nauka/Interperiodica".